| 초록 |
Amorphous indium gallium zinc oxide is mostly used AOS material due to its best electrical and optical properties (highly transparent, good carrier mobility and uniformity). Due to this it has potential to serve as active channel layer in thin film transistors (TFTs). As mobility of IGZO-TFT is higher than that of amorphous silicon, therefore it can improve resolution and size of flat panel displays (FPDs) and operation speed. They are also considered as one of the most promising TFTs to drive OLED displays. However, for the use of a-IGZO TFTs in flat pannel display, defects at the interface layer of channel layer/ gate insulator layer can be removed using RTP system. Various techniques were investigated for deposition of a-IGZO thin films. Sputtering is one of the most favourable in electronics industry due to its low cost, high film quality and ease of large-area film deposition at room temperature. Here, we attempted to achieve high electrical performance, for which fabrication of bottom-gate top contact sputtered a-InGaZnO TFT was done. To get the desired performance of TFT, pressure and temperature was tunned during growth of a-IGZO film inside a rapid thermal process (RTP) system. Prepared devices were analysed by semiconductor parameter analyzer (Keithley 4200-SCS). By using this different electrical characteristics were studied in terms of mobility, Ion/Ioff ratio, subthreshold swing and hysterisis. |
