| 초록 |
Recently, metal-insulator-oxide semiconductor (MIOS) thin-film diodes (TFDs) are attracting attention as a new structure diode with stable and high rectification ratio by using electron current flowing through defect of an insulator. Utilizing various oxide material properties, the on-off current ratio of these oxide-based TFDs can be easily controlled, and stable device characteristics can be maintained even at high voltages. In addition, since all-transparent TFDs can be implemented based on oxide materials, it can be widely applied to future transparent devices. However, the MIOS TFDs, which have been reported so far, is limited to turn on only at about 0 V. To vary the type of MIOS TFDs, the turn-on voltage of the device must be able to shift as in conventional diodes. We introduce a new method to change the turn-on voltage of MIOS TFDs by connecting the Schottky diode to the MIOS TFDs in the reverse direction. This method, which can easily change the operating voltage characteristics of diodes, is expected to help expand the application of MIOS TFDs in the future. |
