| 학회 | 한국재료학회 |
| 학술대회 | 2014년 가을 (11/27 ~ 11/28, 대전컨벤션센터) |
| 권호 | 20권 2호 |
| 발표분야 | A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 | Characteristics of TiO2 thin film by remote plasma atomic layer deposition using a novel Ti precursor |
| 초록 | Although next generation memory (NGM) has been developed, the dynamic random access memory (DRAM) market is expected to increase continuously in the near future. To take the lead in memory semiconductor market, a device manufacturing process technique integrated in less than 20 nm technology must be obtained. However, low capacitance values become a critical issue in the current device fabrication technology. Thus, to increase relative dielectric constant in a DRAM device, many materials have been investigated as a high-k dielectric material. The titanium dioxide (TiO2) thin film of rutile phase is a promising candidate of a metal-insulator-metal (MIM) capacitor dielectric due to its high dielectric constant. In this study, dimethylamin-cyclopentadienyl titanium, (CpN)Ti(NMe2)2, which is newly synthesized as a Ti precursor was used to deposit TiO2 thin films by remote plasma atomic layer deposition (RPALD) process. The temperature window for RPALD was a wide range of 170-400 °C and the growth rate was 0.44 ± 0.03 Å/cycle. The X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) results indicated that nearly stoichiometric TiO2 thin film was deposited with this new precursor. Based on time of flight – secondary ion mass spectroscopy (ToF-SIMS) result, a small amount of carbon and hydrogen impurities were observed. Also, we achieved pure rutile-phased TiO2 thin film by RPALD method using this new precursor and O2 plasma. These results are very important because the dielectric constant of TiO2 film is dependent on the rutile and anatase phases of TiO2. The (CpN)Ti(NMe2)2 precursor showed improvement in rutile phase crystallinity with a higher thermal stability. Therefore, the new (CpN)Ti(NMe2)2 precursor is a promising Ti precursor for the deposition of TiO2 thin films. We believe that these results are great interest in the manufacturing process for nano-scale TiO2 film because (CpN)Ti(NMe2)2 provides good thickness controllability as well as pure rutile TiO2. |
| 저자 | Chunho Kang, Heeyoung Jeon, Woochool Jang, Hyunjung Kim, Hyoseok Song, Honggi Kim, Hyeongtag Jeon |
| 소속 | Hanyang Univ. |
| 키워드 | titanium dioxide; DRAM; MIM; rutile; remote plasma atomic layer deposition |
