| 초록 |
We present the synthesis and characterization of novel chemically amplified photoresists based on organosilicate polymers. The photopatternable copolymers were synthesized from three distinct monomers: 4-triethoxysilanylphenol, 1,2-bis(triethoxylsilyl)ethane (BTESE), and 1-tert-butoxy-4-triethoxysilylmethyl-benzene. The optical and mechanical properties of the imaged films were investigated. Feature size up to 5 μm in the positive tone resist has been achieved by the exposure of 365 nm UV light. Adhesion between resist film and substrate was successfully improved by the incorporation of 4-triethoxysilanylphenol monomer. These novel copolymers with both photopatternability and good physical properties are anticipated to make a potential contribution as planarization and barrier layer materials in optoelectronic devices. |
