| 초록 |
An organic resistive random access memory is a device that operates through a mechanism based on charge trapping and detrapping of charge carriers. The insufficient charge trap of organic materials and the non-uniform dispersion of the conducting block in the matrix require excessive energy in the injection and transportation of carriers, thereby deteriorating the device performance and reliability. Herein, we demonstrate that the introduction of structure electrodes can solve these issues. A structure electrode increases the magnitude of applied electric fields to the organic layer in the localized region and improves the charge injection. As a result, the pyramidal device achieved endurance for 50 DC cycles and 104 s retention time without the addition of conductive parts, demonstrating its potential as an electronic application by exhibiting stable and effective resistance switching behavior. |
