| 초록 |
A method is presented for patterning the pentacene active layer of organic thin film transistor. The method involves forming a metal pattern on a gate dielectric surface by transfer patterning, depositing pentacene over the whole surface, and then lifting off a bilayer of pentacene on the metal with a flat elastomeric mold. Compared with the method of direct pentacene transfer reported earlier (S. Y. Park, T. Kwon, and H. H. Lee, Adv. Mater. 18, 1861, 2006), this alternative allows one to choose a surface for larger pentacene grain size and eliminates a high off-current associated with the direct transfer method. The rigid nature of a rigiflex mold allows the pentacene pattern size to be defined in sub-micrometer range and the flexible nature of rigiflex and elastomeric molds permits large area application. |
