| 초록 |
Doping semiconductor nanocrystals (NCs) has been actively conducted to control electrical characteristics of these materials for various electronic/optoelectronic device applications. InAs NCs are the next-generation active materials in the near-infrared (NIR) region that also satisfies RoHS. InAs NCs from typical synthesis are known to be n-type, and previous doping strategy on InAs NCs leads increasing the electron density of the materials; n-type doping is done on originally n-type material. One previous report demonstrates p-type doping of InAs NCs, but it utilizes Cd as the dopant causing environmental issues. Also, the doping in these works are done through cumbersome post-sythetic processes. Here, we In this presentation, we introduce a novel way of attaining p-type InAs NCs using Zn dopant. The dopant is introduced initially from the synthesis stage; thus, the doping does not involve additional post-synthetic process. Thin-films of the resulting p-type InAs NCs yield hole mobility as high as ~10-3cm2/V·sec. |
