| 초록 |
Tin oxide (SnO2), with an n-type semiconducting property and a wide band gap (Eg = 3.6 eV), is one of the most promising materials for the applications such as gas sensing, photoelectrochemical devices, energy conversion, and so on. In the present work, the mesoporous SnO2 materials have been successfully obtained from various kinds of mesoporous silica templates such as KIT-6 (bicontinuous 3-D cubic, Ia3d), SBA-15 (2-D hexagonal, P6mm), MSU-H (2-D hexagonal, P6mm), SBA-16 (discontinuous 3-D cubic, Im3m) and spherical mesoporous silica (SMS, disordered) by the nano-replication. Here, we have developed a simple and facile solvent-free infiltration method by using a tin precursor with low melting point around 310 K. The mesoporous SnO2 materials, thus obtained, exhibit very similar mesotructures as well as morphologies, compared with those of mesoporous silica templates. |
