| 학회 | 한국재료학회 |
| 학술대회 | 2006년 봄 (05/19 ~ 05/20, 경상대학교 ) |
| 권호 | 12권 1호 |
| 발표분야 | 반도체재료 |
| 제목 | Organic Non-Volatile Memory Fabricated with Al/Alq3/Al Nano-crystals Surrounded by Amorphous Al2O3/Alq3/Al using O2 Plasma Oxidation |
| 초록 | Organic bistable devices (OBD) are a promising non-volatile memory with the integration density of Tera-bits. We developed novel organic non-volatile memory fabricated with the device structure of Al/Alq3/Al nano-crystals surrounded by amorphous Al2O3/Alq3/Al using O2 plasma oxidation. Its electrical bistability is a phenomenon by which a device exhibits two different conduction states such as low and high resistance at the same applied voltage. In the structure of OBD, the middle layer thickness, Al nano-crystals surrounded by amorphous Al2O3, is an important parameter determining electrical bistability. We investigated the effect of middle Al thickness on non-volatile organic bistable memory. Our experimental results show optimal middle layer thickness was 20~30nm, resulting in uniform distribution of Al nano-crystals. I-V characteristics of bistable switching device were obtained by sweeping the voltage from 0 to 10V. The results demonstrated the threshold (Vth), program (Vp), and erase (Ve) voltage were about 3, 5, and 7.1V The most suitable device fabrication method is investigated through the analysis of I-V characteristic, AFM, XPS, Auger and FIB/TEM. *This research was supported by Korea ministry of commerce, industry and energy for the 0.1 Terabit Non-volatile Memory Development. |
| 저자 | Se-Yun Lim1, Sung-Ho Seo2, Jea-Gun Park1 |
| 소속 | 1Nano SOI Process Laboratory, 2Hanyang Univ. |
| 키워드 | Organic bistable devices; Alq3; amorphous Al2O3 |
