| 초록 |
By using the optical electric field induced second harmonic generation (EFISHG) measurement, we discuss device operation and degradation of organic field effect transistors and double-layer diodes, on keeping in mind that active layer of these devices exhibit dielectric nature. Time-resolved SHG (TR-SHG) measurement directly visualizes carrier dynamics, and Maxwell-Wagner (MW) model well accounts for the visualized carrier behaviors. The I-V measurement after prolonged stress biasing shows the threshold voltage shift. Accordingly Raman measurement evidently probes structural deformations as well as chemical changes at molecular level. Carrier injection process followed by carrier accumulation at the double-layer interface has been investigated in terms of degradation using double-layer. We concluded that using EFISHG measurement is an effective way to probe degradation induced in polymer layers in organic devices. |
