| 학회 |
한국고분자학회 |
| 학술대회 |
2016년 봄 (04/06 ~ 04/08, 대전컨벤션센터) |
| 권호 |
41권 1호 |
| 발표분야 |
분자전자 부문위원회 I |
| 제목 |
Solution-Processed Oxide Dielectrics via Large-Area Printing Method for Metal-Oxide Transistor Arrays with Direct Patterning |
| 초록 |
In this work, we demonstrate the fabrication of thin and densified sol–gel metal oxide films for high performance gate dielectric layers by a simple bar-printing method in large-area scale for thin-film transistor arrays. The control range of thin film thickness of single-coated aluminum and hafnium oxide dielectric films can be achieved with a nano-scale resolution (>40 nm) by adjustable solution rheological factors (e.g. shearing speeds and solution concentrations). The fabricated high-quality oxide dielectric layers exhibited remarkable electrical performances such as very low leakage current density and very high areal capacitance with excellent smooth surface properties with very uniform large-area coverage up to 4-inch silicon wafer. Lastly, in accompany with direct-solution patterning process, solution-bar-coated metal oxide transistor arrays were performed with sufficient transistor performance under very low operation voltage below 2V with a sol-gel semi-conducting material. |
| 저자 |
이원준1, 박성준1, 성수진1, 노용영2, 윤명한1
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| 소속 |
1광주과학기술원, 2동국대 |
| 키워드 |
Solution-Processing; Oxide Dielectric; Electronics
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| E-Mail |
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