| 학회 | 한국재료학회 |
| 학술대회 | 2010년 가을 (11/11 ~ 11/12, 무주리조트) |
| 권호 | 16권 2호 |
| 발표분야 | F. Display and optic Materials and processing(디스플레이 및 광 재료) |
| 제목 | Growth of two-dimensional AlN films by plasma-assisted molecular-beam epitaxy |
| 초록 | Deep ultra-violet (UV) light emitting diodes (LEDs) have many applications in environmental, biological, and medical instruments using photonic devices. High electron mobility transistor (HEMT) also has big industrial applications using electronic power devices. Aluminum nitride (AlN) has attracted increasing attentions due to its promising applications to both deep-UV LED and HEMT. Most of cases, the AlN films were grown by heteroepitaxial techniques in which the substrates used are not the AlN. The large lattice and thermal mismatches between the AlN and the substrates generally resulted in high dislocation density and crack generation in the AlN films. Recently, researchers have achieved growth of AlN layer with a relatively low defect density on sapphire substrate with vicinal angles to 0~2° and on free standing GaN template substrates. However, growth of high quality AlN films is still a big issue since there are no economically good substrates with small lattice and thermal mismatches for heteroepitaxial growth of AlN. In this study, AlN films were grown by plasma-assisted molecular-beam epitaxy (PAMBE). All the growth behaviors were monitored by in-situ reflection high energy electron diffraction (RHEED). In order to grow AlN films of two-dimensional and to get high quality, Nitridation of sapphire substrate and multiple growth temperatures are employed. Atomic force microscopy (AFM) was used to investigate the surface morphologies of AlN films. X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) were used to investigate the structural properties of the AlN films. Photoluminescence (PL) is, also, used to assess the optical properties of the AlN films. The details of investigation will be discussed. |
| 저자 | 이효성1, 한석규1, 홍순구1, 안병준2, 송정훈2, 정명호3, 이정용3, Takafumi Yao4 |
| 소속 | 1충남대, 2공주대, 3KAIST 신소재공학과, 4Center for Interdisciplinary Research |
| 키워드 | Semiconductiong III–V materials; Niride; Molecular beam epitaxy |
