| 학회 |
한국재료학회 |
| 학술대회 |
2011년 봄 (05/26 ~ 05/27, 제주 휘닉스 아일랜드) |
| 권호 |
17권 1호 |
| 발표분야 |
C. Energy and the Environment Technology(에너지 및 환경재료) |
| 제목 |
Effect of S vapor temperature on the properties of CuInS2 thin films by sulfurization of sputtering deposited In/Cu |
| 초록 |
CuInS2 (CIS) thin films were prepared by sulfurization of sputtering deposited In/Cu precursor thin films. The atomic ratio and thickness of In/Cu precursor was 1.1. In order to synthesis of CIS thin films, sulfurization was carried out the S powder + Ar atmosphere at 425 °C for 1 hour using two zone furnace. Effect of different S vapor temperature from 150 to 400 °C on the structural, morphological, compositional and optical properties of CIS thin films were investigated. X-ray diffraction study showed that the sulfurized thin films with S vapor temperature below 300 °C exhibited CIS tetragonal structure with some secondary phase such as CuS and InS. However, the sulfurized thin films with S vapor temperature over 350 °C showed a single CIS tetragonal structure. Compositional ratio of CIS thin films showed that Cu/In and S/(Cu+In) ratio of CIS thin films with S vapor temperature over 350 °C were 1.0~1.2 and 0.9~1.1, respectively. These with S vapor temperature below 350 °C deviated from stoichiometry. Optical study showed that the band gap energy and absorption coefficient of CIS thin films were estimated from 1.15 to 1.5 eV and over 104 cm-1. |
| 저자 |
Seung-Hwan Lee1, Seung-Wook Shin2, Jun-Hee Han3, Jae-Ho Yun4, Jong-Ha Moon5, Jeong-Yong Lee6, Jin-Hyeok Kim7
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| 소속 |
1Photonics Technology Research Institute, 2Department of Materials Science and Engineering Chonnam National Univ., 3300 Yongbong-Dong, 4Puk-Gu, 5Gwangju 500-757, 6South Korea, 7Department of Materials Science and Engineering |
| 키워드 |
CuInS2 (CIS); Sulfurization; S powder; metallic precursor; thin film solar cells
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| E-Mail |
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