| 학회 | 한국재료학회 |
| 학술대회 | 2006년 가을 (11/03 ~ 11/03, 수원대학교) |
| 권호 | 12권 2호 |
| 발표분야 | 반도체 재료 |
| 제목 | A Study of GaN Epilayers Grown on Patterned Ion Implanted Sapphire Substrate |
| 초록 | GaN is one of the most promising wide-band gap III-V semiconductors for application in optical devices, because it has a direct band gap of 3.39eV and high external photoluminescence quantum efficiency. However, it is difficult to grow high-quality GaN epilayer on a sapphire substrate with low density of threading dislocations. Therefore, there have been many studies on the reduction of the defects. To grow high-quality GaN epilayer, recently, N+-ion-implantation process directly to the sapphire was reported to be effective as a pretreatment technique and the GaN epilayer grown by lateral epitaxy on the patterned sapphire substrates were successfully used to grow the GaN LEDs. In this study, we propose a new approach for growing a high-quality GaN epilayers on patterned ion implanted sapphire substrate. The patterns were fabricated by standard photolithography process. Then, the region of pattern on the sapphire substrate was implanted by 60keV N+ ion at a dose of 1ⅹ1016 cm-2. We fabricated GaN epilayer on patterned N+-ion implanted sapphire substrate by metal organic chemical vapor deposition (MOCVD). We compared the structural and optical properties of GaN epilayer grown on patterned ion implanted sapphire substrate and conventional sapphire substrate |
| 저자 | Jaehong Choi1, Seungdo Yang1, Samseok Jang1, Junggeun Jhin2, Dongjin Byun1 |
| 소속 | 1Korea Univ., 2Korea Photonics Technology Institute |
| 키워드 | GaN; MOCVD; Patterned ion implanted sapphire |
