| 학회 |
한국화학공학회 |
| 학술대회 |
2003년 봄 (04/25 ~ 04/26, 순천대학교) |
| 권호 |
9권 1호, p.1091 |
| 발표분야 |
재료 |
| 제목 |
The effect of microwave wet etching time on chemical and mechanical adhesion properties of the electroless Ni-P plating |
| 초록 |
A simple and short microwave-enhanced wet chemical etching process of SiC particles has been developed for electroless Ni-P plating, and the etching effects are investigated by using BET surface area analysis, SEM, XPS and ICP-AES. The microwave wet chemical etching process are performed for 0, 15, 30, 60 and 90 sec and the etched SiC for 30sec are maximum adhesion strength. The results indicate that the microwave etching for 30 sec gives the formation of surface oxide species, which leads maximum value in BET surface area of the SiC sample. The modified SiC surfaces are suitable for the electroless Ni-P plating and the Ni-P deposit thus obtained exhibit excellent chemical and mechanical adhesion strength. |
| 저자 |
강 민1, 이승환1, 김지만1, 김영길2, 이재의1
|
| 소속 |
1아주대, 2오산대 |
| 키워드 |
microwave wet etching; SiC particle; electroless Ni-P plating
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| E-Mail |
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