| 학회 | 한국재료학회 |
| 학술대회 | 2012년 봄 (05/17 ~ 05/18, 무주덕유산리조트) |
| 권호 | 18권 1호 |
| 발표분야 | C. 에너지/환경 재료(Energy and Environmental Materials) |
| 제목 | Synthesis of β-SiC powder and controlling its particle size |
| 초록 | Silicon carbide (SiC) powder is used widely due to its good properties with high thermal stability, high strength, good chemical resistance and high hardness. Especially, SiC single crystal is imported for semiconducting device. Silicon carbide powders can be produced in various methods, including CVD from organometallic silane precursor. direct carbonization of Si metals, pyrolysis of silane compounds and carbothermal reduction of silicon dioxide(SiO2) with carbon. Direct carbonization method is the most general method with simple and low cost. But it leaves significant amounts of unreacted silicon and other impurities. Carbothermal reduction method can produce high purity SiC powder even though the production cost is high. High purity SiC powder is required for growing single crystal. And the carbothermal method is suitable for producing high quality SiC powder. The carbothermal method is based on the reacting of silica or silica sol with carbon source as starting materials. In previous work, we produced high purity SiC powder with TEOS(tetraethylorthosilicate), novolac type phenolic resin(synthesized in the lab) as Si and C source, respectively. The precursor was heated at 1800℃ for 2 h in Ar. In this work, with synthesized β-SiC powder thermal treatment was carried out and controlled its particle size. The β-SiC powders were characterized by SEM, XRD, Particle size analyzer and chemical analysis. |
| 저자 | Eunjin Jung1, Yoon Joo Lee2, Soo Ryong Kim3, Woo Teck Kwon4, Younghee Kim1 |
| 소속 | 1Energy Materials Center, 2Korea Institute of Ceramic Engineering and Technology, 3Seoul, 4Korea. |
| 키워드 | β-SiC powder; carbothermal reduction |
