| 학회 |
한국화학공학회 |
| 학술대회 |
2012년 봄 (04/25 ~ 04/27, 제주 ICC) |
| 권호 |
18권 1호, p.850 |
| 발표분야 |
이동현상 |
| 제목 |
3D feature profile simulation based on realistic surface kinetic studies of silicon dioxide etch process in C4F6/Ar/O2 plasmas |
| 초록 |
Recently, one of the critical issues in the etching processes of the nanoscale devices is to achieve ultra-high deep contact hole without anomalous behaviors such as sidewall bowing, and twisting profile. To achieve this goal, the fluorocarbon gas have been used with numerous additives to optimize the reactant fluxes and obtain the ideal etch profiles. As an effort to address this issue, we have developed a 3D topography simulator using the level set algorithm based on new memory saving technique, which is suitable in the high aspect ratio contact hole etching. For this feature profile simulation, we performed a fluorocarbon plasma-surface kinetic modeling based on the experimental plasma diagnostic data for etching process under C4F6/O2/Ar plasmas. In this work, a polymer layer based surface kinetic model was proposed as considering material balance of deposition and etching through steady-state fluorocarbon layer. Finally, the surface kinetic modeling results showed good agreements with experimental data and could be used successfully for 3D etch profile simulations with consideration of polymer layer. |
| 저자 |
장원석1, 유동훈2, 조덕균3, 육영근3, 천푸름3, 이세아3, 김진태3, 김상곤3, 권득철1, 송미영1, 윤정식1, 임연호3
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| 소속 |
1국가핵융합(연), 2경원테크 / 전북대, 3전북대 |
| 키워드 |
etching and deposition; surface reaction; C4F6 fluorocarbon plasmas; 3D feature profile simulation
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| E-Mail |
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| 원문파일 |
초록 보기 |
