| 학회 |
한국재료학회 |
| 학술대회 |
2019년 봄 (05/15 ~ 05/17, 평창 알펜시아 리조트) |
| 권호 |
25권 1호 |
| 발표분야 |
C. 에너지 재료 분과 |
| 제목 |
Effective Surface Passivation of Crystalline Silicon by Aluminum Oxide with Thermal Atomic Layer Deposition |
| 초록 |
Defects are primary causes of various efficiency losses. Surface defects such as dangling bonds and nanoscale edges and irregularities increase the charge carrier recombination losses. In order to examine surface passivation quality, Aluminum oxide was deposited on both sides of silicon wafers by thermal atomic layer deposition with varying thickness, temperatures, and annealing conditions. Surface recombination velocity was influenced by different annealing conditions, and thickness and temperatures were varied to observe effective lifetime and implied open circuit voltage. Effective lifetime was measured by QSSPC. A careful analysis shows how aluminum oxide serves as an optimized surface passivation layer of crystalline silicon solar cells. |
| 저자 |
고영우1, 현지연1, 김동환1, 강윤묵2, 이해석2
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| 소속 |
1고려대, 2KU-KIST 그린스쿨 대 |
| 키워드 |
Aluminum Oxide(Al2O3); Atomic layer depositon(ALD); Passivation; Crystalline silicon; Solar cell; Recombination
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| E-Mail |
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