| 학회 | 한국재료학회 |
| 학술대회 | 2014년 가을 (11/27 ~ 11/28, 대전컨벤션센터) |
| 권호 | 20권 2호 |
| 발표분야 | C. 에너지/환경 재료(Energy and Environmental Materials) |
| 제목 | Effect of pH on the Sn doped In2S3 buffer layer deposition and CIGS thin film solar cell |
| 초록 | Sn-doped In2S3 thin films were deposited on Cu(In,Ga)Se2 (CIGS) thin film substrates by chemical bath deposition for Cd-free CIGS solar cells. Sn doping in In2S3 was achieved by adding SnCl2 in an aqueous solution that contained InCl3 and CH3CSNH2. With Sn incorporation, long worm-shaped grains disappeared and a uniform and smooth film was deposited. Sn incorporation gradually changed the film from In2S3 crystalline state to amorphous state. This was due to the formation of In(S,OOH) terminal bonds in the Sn(O,S) framework. When the pH in the solution increased, In2S3 layers showed dense without precipitates and good coverage on the CIGS substrate. The cell efficiency increased from 10.0 to 12.7% as the pH in the solution increased from 2.3 to 2.53 because of FF and VOC improvement. The PL spectra spectrum of the CIGS substrate with Sn-doped In2S3 layer showed that an emission peak located at 1.13 eV was quenched in contrast to the spectrum of bare CIGS and In2S3/CIGS films, suggesting that an acceptor level on the CIGS surface was neutralized by Sn and the surface region was inverted to an n type. The buried pn junction induced by Sn doping can decrease the recombination rate at the interface. Thus, the energy conversion efficiency of the CIGS solar cell with Sn-doped In2S3 buffer increased from 11.02 to 12.7% with Sn doping. |
| 저자 | 김지혜, 신동협, 박병국, 안병태 |
| 소속 | 한국과학기술원 신소재공학과 |
| 키워드 | Cu(In; Ga)Se2; CIGS solar cell; In2S3 buffer; chemical bath deposition; Sn doping |
