| 학회 |
한국재료학회 |
| 학술대회 |
2019년 가을 (10/30 ~ 11/01, 삼척 쏠비치 호텔&리조트) |
| 권호 |
25권 2호 |
| 발표분야 |
C. 에너지 재료 분과 |
| 제목 |
Successive Ionic Layer Adsorption and Reaction Based ZnxCd1-xS Buffer Layers for Vapor Transport Deposited SnS Thin-film Solar Cells |
| 초록 |
SnS thin-film solar cells were fabricated by utilizing the ZnxCd1-xS buffer layer as a replacement to the traditional CdS buffer layer. The ZnxCd1-xS buffer layers were deposited on vapor-transport-deposited (VTD) SnS absorber using successive ionic layer adsorption and reaction method. Based on our experimental results, varying the Zn-to-Cd ratio resulted in a series of ZnxCd1-xS thin films with bandgaps in the range of 2.40–3.65 eV. Likewise, the performance of SnS/ZnxCd1-xS TFSCs was tested in addition to their pristine counterparts (CdS and ZnS). ZnxCd1-xS with x = 0.34 was found to be the optimal combination for VTD-SnS TFSCs to achieve an enhanced efficiency of 3.72% with a record open-circuit voltage of 0.405 V as resulting from a controlled conduction band offset (CBO) at the SnS/ZnxCd1-xS interface along with a favorable absorption and moderate conducting properties of the buffer layer. Finally, the superior performance of this particular device was further explored via several extensive experimental analyses. |
| 저자 |
PRAVIN S. PAWAR, Jaeyeong Heo
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| 소속 |
Chonnam National Univ. |
| 키워드 |
Tin monosulfide; zinc cadmium sulfide; thin-film solar cells; buffer layer; open-circuit voltage; successive ionic layer adsorption and reaction
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| E-Mail |
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