| 학회 |
한국재료학회 |
| 학술대회 |
2013년 가을 (11/06 ~ 11/08, 제주롯데호텔) |
| 권호 |
19권 2호 |
| 발표분야 |
C. 에너지/환경 재료(Energy and Environmental Materials) |
| 제목 |
Studies on SILAR deposited CZTS absorber layers using different stacking orders in the precursor thin films |
| 초록 |
Cu2ZnSnS4 (CZTS) thin films have been successfully deposited on Mo coated glass substrates by the sulfurization of stacked precursors using successive ionic adsorption and reaction technique. The stacked precursor thin films were prepared using ZnS and Cu2SnSx at room temperature with different stacking orders of Cu2SnSx/ZnS/Mo (a) ZnS/Cu2SnSx/Mo (b). The stacked precursor thin films were sulfurized at 575°C for 1 followed by soft annealing at 350°C for 30 min in Ar atmosphere. The effects of stacking order in the precursor thin films on the structural, morphological, compositional and optical properties were studied. X-ray diffraction and Raman studies showed that the sulfurized CZTS thin films had a single phase kesterite crystal structure for both the stacking orders. The sulfurized CZTS thin films using stacking order a showed bigger grains and dense morphology without any voids. The direct band gap energies for CZTS thin films were 1.45 and 1.32 eV respectively. |
| 저자 |
M. P. Suryawanshi1, Jin Hyeok Kim1, P. S. Patil2, K. V. Gurav1, G. L. Agawane1, S. W. Shin3, S. M. Bhosale2, A. V. Moholkarar2
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| 소속 |
1Chonnam National Univ., 2Shivaji Univ., 3KASIT |
| 키워드 |
Cu2ZnSnS4 (CZTS); Thin film solar cells (TFSCs); Successive ionic adsorption and reaction (SILAR); X-ray diffraction; Raman spectroscopy; Band gap energy
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| E-Mail |
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