| 학회 | 한국재료학회 |
| 학술대회 | 2015년 가을 (11/25 ~ 11/27, 부산 해운대그랜드호텔) |
| 권호 | 21권 2호 |
| 발표분야 | G. 나노/박막 재료 |
| 제목 | Bandgap engineering of MgxZn1-xO thin films |
| 초록 | The wide bandgap (Eg = 3.37 eV) semiconductor material ZnO has attracted attention due to its large exciton binding energy (60 meV) at room temperature and superior physical and chemical properties. It has become a promising candidate for optoelectronic applications. To realize optoelectronic devices, a bandgap engineering technology is required. In particular, MgxZn1−xO is crucial for applications as a barrier layer or quantum wells in ZnO/ MgxZn1−xO heterostructures. In this study, optical and microstructural characteristics of MgxZn1−xO thin films synthesized by a sol-gel technique were investigated. The aim of this experimental is for bandgap modulation of ZnO with the crystal structure of wurtzite and the bandgap was turned from 3.30 eV to 3.50 eV by alloying ZnO with MgO. Acknowledgments: "This research was supported by the MSIP(Ministry of Science, ICT and Future Planning), Korea, under the “IT Consilience Creative Program” (IITP-2015-R0346-15-1008) supervised by the IITP(Institute for Information & Communications Technology Promotion) |
| 저자 | 이호성1, 문진영2 |
| 소속 | 1경북대, 2연세대 |
| 키워드 | bandgap engineering; MgZnO; sol-gel |
