| 학회 | 한국재료학회 |
| 학술대회 | 2021년 가을 (11/24 ~ 11/26, 경주 라한호텔) |
| 권호 | 27권 2호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Fabrication and characterization of transparent indium zinc tin oxide-based thin film transistor on plastic substrate |
| 초록 | Recently, oxide-based thin film transistors (TFTs) have attracted much attention for flexible display applications due to high mobility, good uniformity and low processing temperature. Amorphous metal oxides allows for controllable conductivity, which permits it to be used both as a transparent semiconductor of conductor, and so to be used both as active and source/drain layers in TFTs. Thus, oxide-based TFTs fabricated on plastic substrates at room temperature have led to the developments of amorphous metal oxides for channel and electrode layers in TFTs, which can be realized with a kind of magnetron sputtered indium-based oxide. The mobility and carrier concentration of IZTO films are primarily related with oxygen vacancies and can be controlled by oxygen partial pressure during deposition. In this work, we have prepared the IZTO thin films on polyethylene naphthalate (PEN) substrate at room temperature by radio frequency sputtering method with varying the argon/oxygen flow ratio during deposition, and their properties were investigated. In addition, characteristics of IZTO-based TFTs with top-gate type structure, seen Fig. 1. The experimental results show that by varying the oxygen flow rate during deposition, it can be prepared the IZTO thin films of two-types; One a conductive film that exhibits a resistivity of 2×10-4 ohm․cm; the other, semiconductor film with a resistivity of 9 ohm․cm. The TFT devices with IZTO layers are optically transparent in visible region and operate in enhancement mode. The threshold voltage, field effect mobility, on-off current ratio, and sub-threshold slope of the TFT are −0.5 V, 7.2 cm2/Vs, ~107 and 0.2 V/decade, respectively. These results will contribute to applications of select TFT to transparent flexible electronics. |
| 저자 | Yong An Jung, Dongcheul Han, Sang Bong Byun, Sung Hun Lee, Soo Hyun Cho, Hanjae Shin |
| 소속 | Gumi Electronics & Information Technology Research Institute |
| 키워드 | indium zinc tin oxide; flexible plastic substrate; thin film transistor |
