| 학회 |
한국화학공학회 |
| 학술대회 |
2012년 봄 (04/25 ~ 04/27, 제주 ICC) |
| 권호 |
18권 1호, p.1032 |
| 발표분야 |
재료 |
| 제목 |
Stoichiometric and Interfacial Assessment of BaxSr1-xTiO3 (x=0, 0.50, 1.0)/p-Si(110) Heterojunction Devices |
| 초록 |
A common wet chemical process is optimized to produce BaxSr1-xTiO3 (x=0, 0.50, 1.0) thin films on p-Si (110) substrates, resulting in cubic SrTiO3, Ba0.5Sr0.5TiO3 and tetragonal BaTiO3 in O2 ambient conditions (100 sccm) at 700 °C. Through X-ray diffractometer (XRD) and X-ray photoelectron spectroscopy (XPS) characterizations the crystallographic phase and band alignment of BaxSr1-xTiO3/Si(110) were studied. A simplest Ag/BaxSr1-xTiO3/Si(110)/Ag and Al/BaxSr1-xTiO3/Si(110)/Pt device structure was assembled to study the deep and shallow levels via capacitance-voltage (C-V) features. Substantial hysteresis (V) was observed for Ba0.5Sr0.5TiO3 and BaTiO3. The observed shift in the binding energy of the core level spectra and the difference in V were explained in the light of band off-set, chemical environment and probable interfacial defect states. |
| 저자 |
Soumen Das, Vallivedu Janardhanam, Liu Daan, 한윤봉
|
| 소속 |
전북대 |
| 키워드 |
BaxSr1-xTiO3 thin films; Heterojunction device; Interfacial behavior
|
| E-Mail |
|
| 원문파일 |
초록 보기 |
