| 학회 | 한국재료학회 |
| 학술대회 | 2015년 가을 (11/25 ~ 11/27, 부산 해운대그랜드호텔) |
| 권호 | 21권 2호 |
| 발표분야 | G. 나노/박막 재료 |
| 제목 | Developing of Inorganic Thin Film Encapsulation Layer Deposited by Low Temperature (＜100 °C) Plasma Enhanced Chemical Vapor Deposition |
| 초록 | Recently, the main keywords of the display market are flexible organic light emitting diode (OLED). There remain many issues to be resolved in order to produce flexible OLED panels. Especially, the encapsulation process among several processes is very important because it is the last step that determines the yield of the OLED panel and blocked moisture and oxygen from entering by outside of the OLED element is an essential process to prevent oxidation of the light emitting material and the electrode material. Encapsulation of frit glass and the metal foil method that is currently being applied are not possible applicable to the Flexible OLED, it must be replaced by the thin film encapsulation (TFE) of the thin-film type. In this study, based on the multi structure layer composed by inorganic and organic process of TFE process of the flexible display was studied with focus for development of the inorganic thin film, The type of inorganic thin film is SiNx and it was deposited by plasma enhanced chemical vapor deposition (PECVD) at low temperature (＜100 °C). Also we carried out several analysis such as spectroscopic ellipsometer, field emission electron microscopy (FESEM), thin film stress measurer In order to investigate physical, chemical properties of the deposited thin films. Finally the amount of moisture to the penetrate in the thin film was measured using a MOCON's AQUATRAN 2 (W). By default in order to implement the OLED element, the water vapor transmission rate (WVTR) in the encapsulation layer is known to have less than 10-6 g/m2·day. But recently, the WVTR of announced SiNx shows 10-2 ~ 10-3 g/m2·day level. We confirmed results of the RI 1.9 ~ 1.95, stress ± 40 MPa by optimizing the process parameters of gas flow, pressure, power. And by minimized the SiNx thickness for the flexible display applications, confirmed results for the WVTR as 5.0X10-5 g/m2·day in a thickness of 100nm. |
| 저자 | Kiyoung Oh1, Younghak Kim1, Daesoo Lee1, Seog Chul Chung1, Byeong Seong Cho1, Jungsu Choi1, Sungjin Kim2, Seungjin Yun2 |
| 소속 | 1LIG INVENIA Co. Ltd., 2Kumoh National Institute of Technology |
| 키워드 | low temperature; PECVD; flexible display; thin film encapsulation; water vapor transmission rate |
