| 학회 |
한국재료학회 |
| 학술대회 |
2008년 봄 (05/22 ~ 05/23, 상록리조트) |
| 권호 |
14권 1호 |
| 발표분야 |
전자재료 |
| 제목 |
Effects of different Mn ion valences in CMR materials to electrical and structural properties |
| 초록 |
Colossal magnetoresistance (CMR) of perovskite Mn oxides (L1-xAxMnO3 where L and A are trivalent rare-earth ions and divalent alkaline earth ions, respectively) are received technological importance because their high TCR values. Due to this high TCR property, LSMO(La1-xSrxMnO3) can be served as a resistor material for uncooled microbolometer. The metallic conductivity and ferromagnetism of CMR thin films can be explained in terms of Zener-type double exchange between the spin-aligned Mn3+ and Mn4+ ions through oxygen ions. In this research, the effects of different Mn ion valences to structural and electrical properties of CMR materials were investigated with LSMO and LBMO(B=Ba) films with same tolerance factor, i.e., no stain difference in the film. And we revealed a correlation between strain and Mn valences of thin films which affect TCR value and structural and micro grain states of thin films |
| 저자 |
Sun Gyu Choi1, Hyung-Ho Park2, A. Sivasankar Reddy1, Byoung-Gon Yu2, Hojun Ryu1
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| 소속 |
1Department of Ceramic engineering, 2Yonsei Univ. |
| 키워드 |
CMR; microbolometer; tolerance factor; Mn valence
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| E-Mail |
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