| 학회 |
한국공업화학회 |
| 학술대회 |
2019년 봄 (05/01 ~ 05/03, 부산 벡스코(BEXCO)) |
| 권호 |
23권 1호 |
| 발표분야 |
에너지저장·변환_포스터 |
| 제목 |
Band Gap Engineered W-Doped TiO2 Blocking Layer: Evidence of Cascade Energy Level in Semiconductor for Efficienct Dye-Sensitized Solar Cell |
| 초록 |
Enhancement of the charge transfer rate at the interfacial region in dye sensitized solar cells (DSSCs) is one of the most important criteria determining cell efficiency. Herein, we report a novel strategy for enhancing charge transfer between dye sensitized active layer and current collector by employing W-doped TiO2 blocking layer. We propose the graded charge transport blocking layer with deposition W-TiO2 thin film having different ECB at layer by layer for enhancing the diffusion coefficient and length with suppressing the probability of charge recombination. The graded blocking layer significantly increases the electron transfer rate at the interfacial region between the active layer and current collector. In particular, graded 1-5-7-9 W blocking layer exhibits highest photovoltaic performance of 11.54 % without decreasing VOC, which is 50 % higher than basic DSSCs without blocking layer. |
| 저자 |
차하림, 손우성, Suresh Thogiti, Rajesh Cheruku, 김재홍
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| 소속 |
영남대 |
| 키워드 |
Dye sensitized solar cell; W-doped TiO2; conduction band; graded electron transfer
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| E-Mail |
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