| 초록 |
We investigated the effects of rapid thermal annealing (RTA) on the electrical, optical, structural, interfacial properties of Nb:TiO2 (NTO)-Ag-NTO multilayer electrodes. Up to RTA temperature of 500°C, the resistivity and optical transmittance of the NTO-Ag-NTO electrodes were stably maintained due to the absence of Ag outdiffusion. The effective activation of the Nb in the NTO layer led to a slight decrease in the resistivity and an increase in the band gap caused by the Burstein-Moss (BM) effect. However, increasing the RTA temperature above 600°C resulted in degradation of the NTO-Ag-NTO multilayer electrode due to severe Ag diffusion. Based on the synchrotron X-ray scattering results, the electrical properties of the NTO-Ag-NTO electrodes are correlated with the microstructure and interfacial diffusion of each layer. In addition, it was found that the performance of the OSC was critically dependent on the RTA temperature of the NTO-Ag-NTO electrodes. This indicates that the activation of Nb dopants in the top NTO layer plays an important role in the extraction of carriers from the organic layer to the anode (NTO-Ag-NTO) electrode. |
