| 학회 |
한국재료학회 |
| 학술대회 |
2010년 봄 (05/13 ~ 05/14, 삼척 팰리스 호텔) |
| 권호 |
16권 1호 |
| 발표분야 |
B. Nanomaterials Technology (나노소재기술) |
| 제목 |
Direct Printable Nanowire p-n Junction device |
| 초록 |
Nano-scale p-n junction can generate various nano-scale functional devices such as nanowire light emitting diode, nanowire solar cell, and nanowire sensor. The core shell type nanowire p-n junction has been considered for the high efficient devices in many previous reports. On the other hand, although device efficiency is relatively lower, the cross bar type p-n junction has simple topological structure, suggested by C.M. Lieber group, to integrate easily many p-n junction devices in one board. In this study, for the integration of the cross bar nanowire p-n junction device, a simple fabrication route, employed dielectrophoretic array and direct printing techniques, was demonstrated by the successful fabrication and programmable integration of the nanowire cross bar p-n junction solar cell. This direct printing process will give the single nanowire solar cell the opportunity of the integration on the circuit board with other nanowire functional devices. |
| 저자 |
Tae Il lee1, Won Jin Choi2, Jyoti Prakash Kar1, Kyung-Ju Moon2, Min Jung Lee, Joo Hee Jun1, Hong Koo Baik2, Jae Min Myoung1
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| 소속 |
1Department of Advanced Materials Science and Engineering, 2Yonsei Univ. |
| 키워드 |
Nanowire; Direct printing; Dielectrophoresis; Diode
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| E-Mail |
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