| 학회 |
한국고분자학회 |
| 학술대회 |
2015년 가을 (10/06 ~ 10/08, 대구컨벤션센터(EXCO)) |
| 권호 |
40권 2호 |
| 발표분야 |
대학원생 구두발표 (발표15분) |
| 제목 |
Al2O3-TiO2 nanolaminate gate dielectric layers with enhanced electrical performance for organic field-effect transistors |
| 초록 |
Nanolamination has come into the spotlight as the process to fabricate a highly dense nanoscale inorganic alloy film. Al-O-Ti (AT) nanolaminate gate dielectric film and their OFET applications by using PEALD process was demonstrated. New AT film exhibit very smooth surface, high dielectric constant (17.8), and the lowest leakage current compared to single Al2O3 and TiO2 film. More importantly, 50 nm thick AT film allows dramatically enhancement of μFET (0.96 cm2/Vs) on pentacene device, and high off current level of TiO2 single layer was effectively lowered. With nanolamination process, we can complement their own drawbacks of each single layer, and finally AT film can provide excellent dielectric properties suitable to high performance OFETs. In addition, triethylsilylethynyl anthradithiophene (TES-ADT) known as solution processable semiconductor were demonstrated. |
| 저자 |
박찬언1, 김세현2, 안태규1, 김래호1, 백용화1
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| 소속 |
1포항공과대, 2영남대 |
| 키워드 |
Organic field effect transistor; gate dielectric; laminate; ALD
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| E-Mail |
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