| 학회 |
한국재료학회 |
| 학술대회 |
2011년 가을 (10/27 ~ 10/29, 신라대학교) |
| 권호 |
17권 2호 |
| 발표분야 |
B. Nanomaterials and Processing Technology(나노소재기술) |
| 제목 |
Metal-insulator transition in low dimensional La0.75Sr0.25VO3 thin films |
| 초록 |
We report on the metal-insulator transition that occurs as a function of film thickness in ultrathin La0.75Sr0.25VO3 films. The metal-insulator transition displays a critical thickness of 5 unit cell. Above the critical thickness, metallic films exhibit a temperature driven metal-insulator transition with weak localization behavior. With decreasing film thickness, oxygen octahedron rotation in the films increases, causing enhanced electron-electron correlation. The electron-electron correlations in ultrathin films induce the transition from metal to insulator in addition to Anderson localization. |
| 저자 |
Huynh Sa Hoang1, Tran M. Dao2, Partha S. Mondal1, Y. Takamura2, E. Arenholz1, Jaichan Lee2
|
| 소속 |
1School of Advanced Materials Science and Engineering, 2Sungkyunkwan Univ. |
| 키워드 |
metal-insulator transition; LSVO; thin film
|
| E-Mail |
|
