| 학회 |
한국재료학회 |
| 학술대회 |
2010년 봄 (05/13 ~ 05/14, 삼척 팰리스 호텔) |
| 권호 |
16권 1호 |
| 발표분야 |
B. Nanomaterials Technology (나노소재기술) |
| 제목 |
Selective fabrication and etching of vertically aligned Si nanowires for MEMS |
| 초록 |
In recent years, there is a strong requirement of low cost, stable microelectro mechanical systems (MEMS) for resonators, microswitches and sensors. Most of these devices consist of freely suspended microcantilevers, which are usually made by the etching of some sacrificial materials. Herein, we have attempted to use Si nanowires, inherited from the parent Si wafer, as a sacrificial material due to its porosity, low cost and ease of fabrication. Prior to the fabrication of the Si nanowires silver nanoparticles were continuously formed on the surface of Si wafer. Vertically aligned Si nanowires were fabricated from the parent Si wafers by aqueous chemical route at 50 ºC. Afterwards, the morphological and structural characteristics of the Si nanowires were investigated. The morphology of nanowires was strongly modulated by the resistivity of the parent wafer. The 3-step etching of nanowires in diluted KOH solution was carried out at room temperature in order to control the fast etching. A layer of Si3N4 (300 nm) was used for the selective fabrication of nanowires. Finally, a freely suspended bridge of zinc oxide (ZnO) was fabricated after the removal of nanowires from the parent wafer. At present, we believe that this technique may provide a platform for the inexpensive fabrication of futuristic MEMS. |
| 저자 |
Jyoti Prakash Kar, Kyeong-Ju Moon, Sachindra Nath Das, Sungyeon Kim, Junjie Xiong, Ji-Hyuk Choi, Tae Il Lee, Jae-Min Myoung
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| 소속 |
연세대 |
| 키워드 |
Si; nanowires; etching; MEMS
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| E-Mail |
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