| 학회 | 한국재료학회 |
| 학술대회 | 2015년 가을 (11/25 ~ 11/27, 부산 해운대그랜드호텔) |
| 권호 | 21권 2호 |
| 발표분야 | A. 전자/반도체 재료 |
| 제목 | High Resolution Dry Patterning of N-type Ohmic Electrodes for Metal Oxide Thin Film Transistors |
| 초록 | In this work, we demonstrated a dry patterning method with high resolution employing a ‘nano-releasing layer’ formed by utilizing LMW PDMS diffused out from a bulk PDMS stamp during contact printing to define n-type Ohmic contact S/D electrodes without photolithography for MOS TFTs. The critical values of the main processing variables required to obtain high quality metal pattering on the oxide film, i.e., bulk PDMS stamp contact time and detachment speed, were found to be 540 s and 5 cm/s, respectively. The potential of this dry patterning was experimentally demonstrated by fabricating In2O3, IZO and IGZO TFTs with Al, a typical n-type Ohmic metal. Al was patterned up to 13μm using dry patterning, and the TFTs showed a higher field-effect-mobility and lower hysteresis in comparison with those of conventional photolithography and shadow mask methods. Furthermore, our HRDP may also be possible using a conventional self-assembled monolayer (SAM). However, most SAM molecules are polar, and they may strongly shift the threshold voltage of a given TFT. These polar SAMs therefore cannot be use for TFT fabrication in our HRDP. Fortunately, the nano-releasing layer LMW PDMS we adopted was a non-polar molecule, so there is no shift in the threshold voltage of a coated metal oxide film of a given TFT. Therefore, we believe that our strategy of HRDP is a strong candidate for use in industrial electronic device fabrication processes. |
| 저자 | Tae Il Lee1, Sang Wook Jung2 |
| 소속 | 1Gachon Univ., 2Yonsei Univ. |
| 키워드 | Metal oxide semiconductors; thin film transistors; poly(dimethylsiloxane); dry patterning; micro contact printing |
