| 학회 | 한국재료학회 |
| 학술대회 | 2006년 가을 (11/03 ~ 11/03, 수원대학교) |
| 권호 | 12권 2호 |
| 발표분야 | 전자 재료 |
| 제목 | TCR Stability of Ta2N5+x-Ag Nanocomposite Thin Film for Embedded Resistor |
| 초록 | A tantalum nitride thin film was attracting great interest due to its durability, corrosion resistivity and reliability for use as embedded thin film resistor (TFR) integrated into printed wiring board (PWB) due to its durability, corrosion resistivity and reliability. Although Ta-N thin films have a wide range of electrical resistivity, these films have been restricted within narrow applications such as the TFR because of its large negative temperature coefficient of resistivity (TCR). TaN-Cu nanocomposite thin films with nano-sized copper particles embedded in the ceramic matrix have been currently tried to controlling TCR to near zero through deposition and subsequent annealing process. But it’s resistivity in the composite is still low for PWB. In this study, we focused on controlling TCR of TFR by the fabrication of TaN-Ag nanocomposite without annealing using a reactive co-sputtering method, where TCR may be approached to zero due to compensation between Ag (+TCR) and Ta-N (-TCR) with higher resistivity than 5000 μΩ-cm. Considering that Ag counterbalances resistivity of TaN-Ag thin film. In results, the resistivity of TaN-Ag (5900 μΩ-cm) with near zero TCR is very larger than that of TaN-Cu (1700 μΩ-cm) as well. |
| 저자 | 박인수1, 박세영1, 정근희1, 나석민2, 서수정3 |
| 소속 | 1성균관대, 22 Dept. of Aerospace Engineering, 3Univ. of Maryland |
| 키워드 | Thnfilm resistor; Ta-N; Ag; nanocomposite; embedded resistor |
