| 학회 |
한국고분자학회 |
| 학술대회 |
2022년 봄 (04/06 ~ 04/08, 대전컨벤션센터) |
| 권호 |
47권 1호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
High-performance metal halide perovskite thin-film transistors |
| 초록 |
We report high-performance p-channel perovskite thin-film transistors based on inorganic caesium tin iodide (CsSnI3) semiconducting layers that have moderate hole concentrations and high Hall mobilities. The CsSnI3 perovskite channels are formed by engineering the film composition and crystallization process using a tin fluoride (SnF2)-modified caesium iodide (CsI)-rich precursor with lead substitution. The optimised transistors exhibit field-effect hole mobilities of over 50 cm2 V-1 s-1 and on/off current ratios exceeding 108, as well as high operational stability and reproducibility. |
| 저자 |
AO LIU1, 노용영2
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| 소속 |
1Pohang Univ. of Science and Technology, 2포항공과대 |
| 키워드 |
metal halide perovskite; high hole mobility; thin-film transistor; low temperature solution process
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| E-Mail |
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