| 초록 |
In this study, we developed UV-patterned ZnO semiconductor thin films from using photo-crosslinkable zinc acrylate (ZnA) in the transistors. The micropatterns of ZnA films were effectively obtained because it didn’t dissolve in the developer due to the crosslinking of the diacrylate groups when irradiated with ultraviolet light. The growth of a ZnO wurtzite crystal structure was observed from patterned ZnA thin film. We found that the operation characteristics of transistors was depended on the ZnO thin-film thickness from different concentration of the solution. Finally, a low-voltage-operating transistor was fabricated from the patterned ZnO semiconductor layer and ZrOx dielectric layer with optimized thickness. This work is expected to be applied to the integrated circuits based on the development of oxide semiconductor thin films, which further contributes to the realization of a simple, economical, and eco-friendly solution-process technology in the field of electronic devices. |
