| 초록 |
Atomic layer chemical vapor deposition (ALCVD) of titanium silicate nanofilms using a precursor combination of tetrakis-diethylamido-titanium (Ti(N(C2H5)2)4) and tetra-n-butyl-orthosilicate (Si(OnBu)4) was studied. ALCVD temperature window in our study was 170-210 °C with a growth rate of 0.8 Å/cycle. We investigated the effects of deposition conditions, such as deposition temperature, pulse time of precursor and purge injection, on the titanium silicate nanofilm growth. Prepared nanofilms were characterized by High-resolution transmission electron microscopy (HR-TEM), energy-dispersion X-ray spectroscopy (EDX), atomic force microscope (AFM), X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). We also investigated the dielectric constant of nanofilm upon the deposition conditions. |
