| 초록 |
One of the important factors to degrade the performance of organic field-effect transistors (OFETs) is the ineffective charge carrier injection from the metal electrode to organic semiconducting layer, and various studies have been conducted so far to improve this. In this study, the organic semiconducting layer was formed by blending the thiol SAM materials with PBTTT-C14 solution to control the nature of the charge carrier injection in the top-contact bottom gate(TCBG) structure of the OFETs, for which a spontaneously generated SAM was produced through annealing process on the S/D electrodes. Compared to the conventional SAM-treatment, the fabrication is simple and applicable on the TCBG-structured OFETs. The field-effect mobility of PBTTT-C14 FETs blended with 1-dodecanethiol was improved from 0.025 cm2/Vs to 0.063 cm2/Vs as compared to that without blending, and the threshold voltage was shifted from 15 V to 0 V, which is closed to an ideal onset operation of the device. |
