| 학회 | 한국재료학회 |
| 학술대회 | 2013년 가을 (11/06 ~ 11/08, 제주롯데호텔) |
| 권호 | 19권 2호 |
| 발표분야 | A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 | Low-Temperature Graphene Synthesis by Inductively-Coupled Plasma-Enhanced Chemical Vapor Deposition |
| 초록 | Graphene has attracted significant attention due to its unique characteristics and promising nanoelectronic device applications. For practical device applications, special attention has to be paid to the synthesis of high-quality graphene on large-area substrates at a realtivel low temperature. Graphene has been synthesized by eloborated mechanical exfoliation of highly oriented pyrolytic graphite, chemical reduction of exfoliated grahene oxide, thermal decomposition of silicon carbide, and chemical vapor deposition (CVD). The CVD has an advantage over other methods in terms of mass production on large-ares substrates. In particular, plasma-enhanced CVD (PECVD) can be very efficient to synthesize high-quality graphene at a relatively low temperature. In this study, we synthesized graphene on various metal substrates, such as Ni, Cu, Fe and Ag, with CH4 diluted in Ar/H2(10%) by using an inductively-coupled PECVD (ICPCVD). Graphene was formed on the entire surface of Ni substrate at 600 oC although CH4 and Ar/H2 gas were supplied under plasma of 600 W for 1 second. The Raman spectrum of showed typical graphene features with D, G, and 2D peaks at 1356, 1584, and 2710 cm-1. We will further discuss low-temperature synthesis of graphene and graphitic films affected by ICPCVD synthesis conditions and various kinds of metal substrates. |
| 저자 | 김동옥1, Lam Van Nang2, 3, Tran Nam Trung4, 김의태1 |
| 소속 | 1Department of Materials Science & Engineering, 2Chungnam National Univ., 3Daejeon 305-764, 4Korea |
| 키워드 | graphene; Low-Temperature; ICPCVD |
