| 학회 |
한국공업화학회 |
| 학술대회 |
2021년 봄 (05/12 ~ 05/14, 부산 벡스코(BEXCO)) |
| 권호 |
25권 1호 |
| 발표분야 |
포스터-디스플레이 |
| 제목 |
Solution-processed NiO as a hole injection layer for stable quantum dot light-emitting diodes |
| 초록 |
This study presents the quantum dot light-emitting diodes (QLEDs) with inorganic hole injection layers (HIL). In the standard structure of ITO/NiO/TFB/QDs/TPBi/LiF/Al, a solution processed NiO film was used as a HIL to replace the acidic PEDOT:PSS layer. The p-type NiO has exhibited great capability of hole-injecting and electron blocking owing to its deep valance band and wide-bandgap. Additionally, its optical transparency and stability is a huge advantage for the bottom emitting device by the solution process. NiO precursor solution was successfully synthesized by the sol-gel method. The annealing temperature and the following UV-ozone treatment were optimized to form the NiO layer. The best device with NiO layers showed high current efficiency (25.1 cd/A) and long shelf life time, which is comparable with that with PEDOT:PSS layer. These results suggest that the NiO HIL can be a good alternative for stable QLEDs. |
| 저자 |
이상원1, 김지완1, 윤창기1, 강명석1, 김수현1, 김영훈2, 오민석3
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| 소속 |
1경기대, 2성균관대, 3한국전자기술(연) |
| 키워드 |
colloidal quantum dots; NiO; solution-processed; quantum dot light-emitting diodes
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| E-Mail |
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