| 학회 |
한국재료학회 |
| 학술대회 |
2007년 봄 (05/10 ~ 05/11, 무주리조트) |
| 권호 |
13권 1호 |
| 발표분야 |
반도체재료 |
| 제목 |
Temperature Dependence of energy band gap for CuAlSe2 Single Crystal Thin Film |
| 초록 |
Single crystal CuAlSe2 layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 410 ℃ with hot wall epitaxy (HWE) system by evaporating CuAlSe2 source at 680 ℃. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal CuAlSe2 thin films measured with Hall effect by van der Pauw method are 9.24×1016 cm-3 and 295 cm2/V·s at 293K, respectively. The temperature dependence of the energy band gap of the CuAlSe2 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 2.8382 eV - (8.68 × 10-4 eV/K)T2/(T + 155 K). |
| 저자 |
홍광준, 김혜정
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| 소속 |
조선대 |
| 키워드 |
CuAlSe2 layers; carrier density; mobility; Varshni's relation; energy band gap
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| E-Mail |
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