| 초록 |
A stoichiometric mixture of evaporating materials for ZnIn2S4 single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, ZnIn2S4 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were 610℃ and 450℃, respectively. The temperature dependence of the energy band gap of the ZnIn2S4 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 2.9514 eV - (7.24 × 10-4 eV/K)T2/(T + 489 K). After the as-grown ZnIn2S4 single crystal thin films was annealed in Zn-, S-, and In-atmospheres, the origin of point defects of ZnIn2S4 single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of VZn, VS, Znint, and Sint obtained by PL measurements were classified as a donors or acceptors type. |
