| 학회 |
한국공업화학회 |
| 학술대회 |
2021년 봄 (05/12 ~ 05/14, 부산 벡스코(BEXCO)) |
| 권호 |
25권 1호 |
| 발표분야 |
포스터-환경·에너지 |
| 제목 |
Green manufacturing of silyl-phosphate for use in 3D NAND flash memory fabrication |
| 초록 |
Three-dimensional NAND flash memory featuring dozens of vertically stacked memory cells is the state-of-the-art technology for most storage platforms. To fabricate 3D NAND memory, lateral etching of the Si3N4 layer over SiO2 is an essential step. Silyl-phosphate or high selective nitride serves as an etching solution additive to control the SiO2 layer dissolution rate. However, silyl-phosphate is prepared with an expensive monomeric silica precursor and high reaction temperatures and generates environmentally harmful byproduct gases. This study demonstrates that silyl-phosphate can be prepared using low-cost polymeric silica under a mild reaction temperature by changing the characteristic acidity of phosphoric acid. The concentrated phosphoric acid enabled a fast reaction of polymeric silica and phosphate at a low reaction temperature. The proposed method offers an environmentally friendly production process for special chemicals used in 3D NAND flash memory fabrication. |
| 저자 |
이현일, 이평수
|
| 소속 |
중앙대 |
| 키워드 |
3D NAND; Si3N4 layer; SiO2 layer; Wet etching
|
| E-Mail |
|
