| 학회 | 한국재료학회 |
| 학술대회 | 2019년 가을 (10/30 ~ 11/01, 삼척 쏠비치 호텔&리조트) |
| 권호 | 25권 2호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | INVESTIGATION OF THE FORMATION OF WOX DURING W CHEMICAL MECHANICAL PLANARIZATION |
| 초록 | Tungsten (W) has been extensively used in different metal chemical mechanical planarization (CMP) for creating the contact via holes and plug materials of numerous inter-layer metal line connection. W CMP comprises the removal of soft oxide (WO3) layer through mechanical actions by using abrasive particles. Soft tungsten oxide layer forms when hard W film reacts with reactive hydroxyl radicals (•OH). In this study, the formation WO3 passive layer is investigated that was generated during CMP by using H2O2, Fe(NO3)3 and combination of both as oxidizers. •OH radicals were generated during in-situ reactions, as a result WO3 thickness increased by reacting with combination of H2O2 and Fe(NO3)3. Low WO3 layer thickness was observed during reaction with H2O2 and Fe(NO3)3 oxidizers separately. The reduction in peak intensity of metallic W 4f7/2 and 4f5/2 observed at 31.6 and 33.8 ± 0.2 eV and less WO3/W (＜ 1) ratio. So the dominant effect of using H2O2 separately for tungsten dissolution instead of forming WO3 is confirmed. Conversely there is no effect of Fe(NO3)3 on tungsten dissolution instead of forming marginal WO3 on the W film. Whereas the combined effect of H2O2 and Fe(NO3)3 resulted in formation of a thick layer of WO3 on W. Furthermore, formation of •OH radicals were comprehensively studied by correlating with static etch rate (SER), tungsten polishing respectively. Passivation of WO3 was also analyzed through electrochemical methods by using potentiodynamic polarization curves. |
| 저자 | Palwasha Jalalzai1, 박진구1, Maneesh Kumar Poddar2, 류헌열1, 정연아1, 김태곤1 |
| 소속 | 1한양대, 2재료화학공학과 |
| 키워드 | <P>Tungsten CMP; WO<SUB>3</SUB> formation; Hydroxyl radicals</P> |
