| 학회 | 한국재료학회 |
| 학술대회 | 2006년 봄 (05/19 ~ 05/20, 경상대학교 ) |
| 권호 | 12권 1호 |
| 발표분야 | 나노 및 생체재료 |
| 제목 | The Anodized aluminum oxide on the Ti/p-Si substrate |
| 초록 | The anodized aluminum oxide is used for template in the nanotechnology because of its high regularity and uniformity. The anodized aluminum oxide was formed on the Si substrates. During the pretreatment of anodizing processes, which are a sputtering deposition and a heat treatment, the Al layer was reacted with Si substrates and formed voids. There are limitations in the applying the anodic oxides to the templates of nanodevices. Ti layer was deposited on the p-Si substrate, and than Al layer was deposited on the Ti layer by sputtering method. The anodic currents density was shown higher than without Ti layer. The anodic voltage and concentration of oxalic acid was varied and optimized for highly ordered nano pores. The morphology of anodized aluminum oxide on the Ti layer was characterized by FESEM. The Ti layer endowed the higher electrical conductivity with the substrates, and than Ni nanorods were deposited into the AAO/Ti/p-Si substrates. This research was performed with the financial support of the Center for Nanostructured Materials Technology (M105KO010023-05K1501-02410), grant No R01-2004-10104-0 from ministry of science & technology, and KRF-2001-E00042. |
| 저자 | Yangsub Kim1, Se Young Jeong2, Yousuk Cho1, Dojin Kim2 |
| 소속 | 1Department of Material Science & Engineering, 2Chungnam National Univ. |
| 키워드 | AAO; AAO/Ti/Si |
