| 학회 | 한국재료학회 |
| 학술대회 | 2006년 봄 (05/19 ~ 05/20, 경상대학교 ) |
| 권호 | 12권 1호 |
| 발표분야 | 나노 및 생체재료 |
| 제목 | The electrical contact between Si substrates and carbon nanotubes on the AAO |
| 초록 | The electrical contact between Si semiconductor and carbon nanotubes is very important in the carbon nanotube devices and field emission devices. The carbon nanotubes have been synthesized into the AAO and contacted on the Si substrates by thermal chemical vapor deposition. The Al metal layer on the Si substrates was anodized and formed anodic aluminium oxides before synthesizing of carbon nanotubes. The growth temperatures of carbon nanotubes were varied from the 900 to the 1200 ℃ to change the graphitization of carbon nanotubes and it is characterized by TEM and Raman. The Ag metal electrode was deposited on the carbon nanotubes by sputter to characterize the electrical property. The electrical contact between the carbon nanotubes and p-Si was shown the schottky property. The barrier height have been decreased, as increasing the growth temperatures. The contact between the carbon nanotubes and n-Si was shown the ohmic property. This research was performed with the financial support of the Center for Nanostructured Materials Technology (M105KO010023-05K1501-02410), grant No R01-2004-10104-0 from ministry of science & technology, and KRF-2001-E00042. |
| 저자 | Chungae Kim1, Nguyen Van Quy2, Nguyen Duc Hoa1, YouSuk Cho2, Dojin Kim1 |
| 소속 | 1Department of Materials Science and Engineering, 2Chungnam National Univ. |
| 키워드 | electrical contact; carbon nanotubes; AAO |
