| 학회 | 한국재료학회 |
| 학술대회 | 2010년 봄 (05/13 ~ 05/14, 삼척 팰리스 호텔) |
| 권호 | 16권 1호 |
| 발표분야 | B. Nanomaterials Technology (나노소재기술) |
| 제목 | Electroluminescence from light-emitting diodes with heterostructure of ZnO nanorods on p-GaN |
| 초록 | Recently, oxide semiconductors have been attracting much research attention because of the increasing need for short wavelength photonic devices, and high-power and high-frequency electronic devices. ZnO is a promising oxide semiconductor for short wavelength light-emitting diode (LED) and laser diode applications. Fabrication and characterization of the optical devices based on single ZnO nanowire, such as nanolasers and optical sensors, have shown promising potential of applications. In this work, we report the device characterization of wide-band-gap heterojunction LED based on the n-ZnO film/ ZnO nanorods/ p-GaN film structure. The GaN layer is achieved by growing a Mg-doped GaN film of thickness 2μm on Al2O3 (0001) by MOCVD, and then ZnO nanowires is grown by hydrothermal process, and finally Al doped ZnO film (or IGZO film) is deposited on the top of ZnO nanowires using a sputter. The formation of ZnO nanorods is controlled by reactant concetration, temperature and pH. The electrical and optical characteristics of the devices are discussed and reported. |
| 저자 | Yu Rim1, Lee2, Md. Mahbub Alam1, Woo Gwang2, Jung1 |
| 소속 | 1Department of Advanced Materials Engineering, 2Kookmin Univ. |
| 키워드 | ZnO nanorods; GaN; Heterojunction; Light-emitting diodes |
