| 학회 |
한국공업화학회 |
| 학술대회 |
2019년 봄 (05/01 ~ 05/03, 부산 벡스코(BEXCO)) |
| 권호 |
23권 1호 |
| 발표분야 |
무기재료_포스터 |
| 제목 |
Highly Efficient Cadmium-free quantum dot light-emitting diodes with InP/ZnSeS/ZnS quantum dots(QDs) |
| 초록 |
The high photoluminescence quantum yield (PLQY) and stability of the thick-shelled green InP/ZnSeS/ZnS QDs were used in the QLED device. The efficient radiative recombination of these excitons is enabled in structurally engineered InP/ZnSeS/ZnS QDs, in which excitons in the InP part are effectively passivated by ZnSeS composition-gradient intermediate shell plus a ZnS outer shell. The resulting green InP/ZnSeS/ZnS QDs possessed a PL peak at 535 nm with full width at half maximum(FWHM) of 50 nm. To further improve the performance of the QLED device, we used ZnMgO as the ETL. An external quantum efficiency(EQE) of 1.2% is achieved in a green QLED. The brightness of the ITO/PEDOT:PSS/Poly-TPD/QDs/ZnMgO/Al conventional QLED device can reach 3200 cd m-2. |
| 저자 |
박선아, 유정열, 정운호, 김은비, 김종규
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| 소속 |
단국대 |
| 키워드 |
InP qauntum dot; composition-gradient shell; electroluminescence devices
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| E-Mail |
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