| 학회 |
한국재료학회 |
| 학술대회 |
2010년 봄 (05/13 ~ 05/14, 삼척 팰리스 호텔) |
| 권호 |
16권 1호 |
| 발표분야 |
C. Energy and the Environment(에너지 및 환경재료) |
| 제목 |
Growth of 4 wt% Ga-doped epitaxial ZnO thin film on MgAl2O4 (111) substrate using hydrothermally grown ZnO buffer layer |
| 초록 |
4 wt% Ga-doped epitaxial ZnO (GZO) thin films were prepared on the ZnO buffered and non-buffered MgAl2O4 (111) substrates by RF magnetron sputtering method at a low growth temperature of 250 C. The epitaxial ZnO buffer layer was deposited on a MgAl2O4 (111) substrate by hydrothermal technique using aqueous solutions of zinc nitrate hexahydrate, ammonium nitrate and ammonium hydroxide at 90 oC. The effect of a ZnO buffer layer on the crystallinity, epitaxy nature, surface morphology, optical, and electrical properties of the GZO thin films are investigated. The X-ray diffraction pattern showed that the GZO thin films grown on a buffered substrate are epitaxially grown with an orientation relationship of . The GZO thin films grown on a non-buffered substrate are polycrystalline with hexagonal wurtzite phase having highly c-axis preferred, out-of-plane orientation and random in-plane orientation. The room temperature photoluminescence spectra of the epitaxial GZO thin film grown on a buffered substrate showed sharp near band edge emission peak and lower broad deep-level emission peak than that of the polycrystalline GZO thin film grown on a non-buffered substrate. The electrical resistivity of the GZO thin film is improved from 4.69×10-3 Ωcm to 2.27×10-3 Ωcm by introducing hydrothermally deposited ZnO buffer layer. |
| 저자 |
Seung Wook Shin1, Ye Bin Kwon2, Kyu Ung Sim2, Jong-Ha Moon3, Jin Hyeok Kim4, Jeong Yong Lee3
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| 소속 |
1Department of Materials Science and Engineering KAIST, 2bDepartment of Materials Science and Engineering Chonnam National Univ., 3bDepartment of Materials Science and Engineering, 4Chonnam National Univ. |
| 키워드 |
Transparent Conducting Oxide (TCO); Ga-doped ZnO thin films (GZO); Hydrothermal deposited ZnO buffer layer; Epitaxial growth; Low growth temperature
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| E-Mail |
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