| 학회 | 한국재료학회 |
| 학술대회 | 2014년 가을 (11/27 ~ 11/28, 대전컨벤션센터) |
| 권호 | 20권 2호 |
| 발표분야 | A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 | Sintering and Electrical Properties of Nb2O5-doped ZnO-V2O5-Mn3O4 Ceramics |
| 초록 | Doped-ZnO ceramics are widely applied to electronic devices using grain boundary effect. ZnO varistor is one of the semiconductor resistance device, manufactured by various chips and disks. This device is applied to protect the internal components is circuits from electrostatic discharge (ESD), surge or lightning. These ceramics with the addition of small amounts of other metal oxides exhibit highly non-ohmic behavior in current-voltage characteristics. The electrical properties of ZnO varistor depend greatly on the dopants. In this study, Nb2O5 doping effect on microstructure and electrical properties of ZnO-V2O5-Mn3O4 varistor ceramics were investigated. The starting materials were used 99.9% of ZnO, V2O5, Mn3O4 and Nb2O5 powder. 0.0 ~ 5.0 at% Nb2O5-doped ZnO-V2O5-Mn3O4 ceramicss were fabricated by a commercial ceramic sintering processes. These ceramics were prepared by sintering at 700 to 1200 ℃. The densification and grain growth of Nb2O5-doped ZnO-V2O5-Mn3O4 ceramics was influenced by Nb2O5 content. In this study, Nb2O5 doping effect on microstructure and electrical properties of ZnO-V2O5-Mn3O4 varistor ceramics was investigated and exhibited a nonlinear behavior by proper amount of Nb2O5 As a result, it can be seen that the incorporation of Nb2O5 has a significant effect on nonlinear properties. The behavior of a can be related to the potential barrier depending on electronic states at the grain boundaries in accordance with the incorporation of Nb2O5 Therefore, the increase or decrease of a amount of Nb2O5 is attributed to the increase or decrease of potential barrier height at the grain boundaries. |
| 저자 | 김유비1, 홍연우2, 이영진2, 김세기2, 조만호1 |
| 소속 | 1연세대, 2한국세라믹기술원 |
| 키워드 | ZnO Varistor; Electrical Property; Grain Boundary; Nb2O5 |
